The initial growth of vapour deposited gold films

Raman bands in microwave plasma assisted chemical vapour deposited films

Raman spectroscopy is employed to characterize thin diamond films deposited by microwave plasma assisted chemical vapour deposition technique using a gas mixture of methane and hydrogen. The surface morphology of the films was analyzed by scanning electron microscopy. We have identified submicron crystals on (100) facets of diamond crystals which gave rise to bands in the Raman spectrum centred...

the analysis of the role of the speech acts theory in translating and dubbing hollywood films

از محوری ترین اثراتی که یک فیلم سینمایی ایجاد می کند دیالوگ هایی است که هنرپیش گان فیلم میگویند. به زعم یک فیلم ساز, یک شیوه متأثر نمودن مخاطب از اثر منظوره نیروی گفتارهای گوینده, مثل نیروی عاطفی, ترس آور, غم انگیز, هیجان انگیز و غیره, است. این مطالعه به بررسی این مسأله مبادرت کرده است که آیا نیروی فراگفتاری هنرپیش گان به مثابه ی اعمال گفتاری در پنج فیلم هالیوودی در نسخه های دوبله شده باز تولید...

A Principle Governing Growth Orientation in Vapour-deposited Layers

The preferred orientation ofvapour-deposited layers can originate from several stages of the evaporation. It is shown that an increase in the orientation sharpness during the vertical growth points to a process of "evolutionary selection". This process is discussed and visualized. The orientation is calculated as a function of the angle of incidence for a number of typical, most extreme, cases....

Gold catalytic Growth of Germanium Nanowires by chemical vapour deposition method

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films